A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

µA

60

V

f = 2 - 18 GHz

0.025

0.035

pF

f = 1.0 GHz

2.5

3.0

Ω

Ω

Ω

Ω

ττττ

40

nS

2.4

nS

Lead Pull

5

gm

SILICON BEAM LEAD PIN DIODE

ASB8000

PACKAGE STYLE BL1

DESCRIPTION:

The

PIN Diode Designed for High Speed

Switching Applications Up to 18 GHz.

FEATURES INCLUDE:

• Low Capacitance - 0.025 pF Typical

• Low Series Resistance - 2.5 Ω Typical

• High Beam Pulls - 5 Grams Minimum

MAXIMUM RATINGS

100 mA

60 V

-65

-65

θθθθ

JA

600