A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

65

V

3.5

V

10

---

ηηηη

C

VSRW

1

F = 1090 MHz

PW = 10 µsec

DF = 1 %

F = 1030 MHz

1000

6.0

43

250

70

9:1

W

W

dB

%

ns

Note 1: At rated output power and pulse conditions.

NPN SILICON RF POWER TRANSISTOR

AVF1000

DESCRIPTION:

The

transistor Designed for pulsed systems

Applications up to 1090 MHz.

FEATURES:

• Internal Input/Output Matching Networks

• P

• Omnigold™ Metalization System

MAXIMUM RATINGS

65 A

55 V

3.5 V

-65 °C to +200 °C

-65 °C to +200 °C

θθθθ

JC

0.06 °C/W

PACKAGE STYLE .450 BAL FLG (B)

1 = Collector 2 = Base 3 = Emitter

MINIMUM

inches / mm

.411 / 10.44

.825 / 20.96

B

C

D

E

F

G

A

MAXIMUM

.865 / 21.97

.421 / 10.69

inches / mm

H

DIM

K

L

I

J

.002 / 0.05

.095 / 2.41

.006 / 0.15

.105 / 2.67

.250 / 6.35

M

.373 / 9.47

.385 / 9.78

.115 / 2.92

.135 / 3.43

.457 / 11.61

.445 / 11.30

1.675 / 42.55

1.685 / 42.80

.205 / 5.21

A

B

.120 x 45°

C

.050 NOM.

F

G

H

I

J K

L

M

4X.060 R

.210

.208

D

E

FULL R

.525 / 13.34

.535 / 13.59

1.265 / 32.18

1.255 / 31.88

.120 / 3.25

.130 / 3.30

1

3

2