| Electronic Components Datasheet Search |
|
MA41202C Datasheet(PDF) 1 Page - Advanced Semiconductor |
|
|
|||||||||||||||||||||||||||||
MA41202C Datasheet(HTML) 1 Page - Advanced Semiconductor |
|
|
1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS NF OVERALL NOISE FIGURE 9.8 dB CL CONVERSION LOSS 6.5 dB VSWR VOLTAGE STANDING WAVE RATIO 1.5 --- ZIF IF IMPEDANCE 335 465 Ω Ω Ω Ω fRange Niif = 1.5 dB RL = 100 Ω f = 9.375 GHz 8.2 12.4 GHz SILICON DETECTOR DIODE MA41202C DESCRIPTION: The MA41202C is a High Burnout Point Contact Mixer Diode. MAXIMUM RATINGS I 20 mA V 1.0 V PDISS 10 ERGS @ TC = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC PACKAGE STYLE DO-23 |
Similar Part No. - MA41202C |
|
Similar Description - MA41202C |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |