A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

TRANS1.SYM

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

MAG

MAX AVAILABLE GAIN

FREQUENCY

= 8.0 GHz

8.5

dB

PMAG

OUTPUT POWER AT MAG TUNING

FREQUENCY

= 8.0 GHz

24

dBm

HIGH POWER GaAs FET

MSC8001

FEATURES INCLUDE:

•

27.5 dBm Output Power with 7db

Associated Gain at 8 GHz

•

Power Optimized Design Provides

High Power-added Efficiency

•

Large Cross Section Ti/Pt/Au

Gates Enhance Durability and

Reliability

•

Chip Devices are Selected from

Standard Military Grade Wafers

•

Hermetic Metal/Ceramic Package

Suitable for Hi-Rel Applications

•

Custom Electrical Test and

Screening Available for Source

Control Drawings

FET PACKAGE TYPE 30