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MSC74532 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MSC74532 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 45 V BVEBO IC = 2.0 mA 3.5 V ICBO VCB = 28 V 0.5 mA hFE VCE = 5 V IC = 0.4 A 10 200 --- PG ηηηη C VCC = 24 V PIN = 2.2 W f = 1.7 - 2.0 GHz Pulse Width = 100 µS Duty Cycle = 10% 7.4 40 dB % NPN RF POWER TRANSISTOR MSC74532 DESCRIPTION: The ASI MSC74532 is a Common Base Device Designed for Class C Applications in the 1.7 - 2.0 GHz bands. FEATURES INCLUDE: •••• Input/Output Matching • Gold Metallization • Hermetically Sealed Package •••• Emitter Ballasting MAXIMUM RATINGS IC 1.0 A VCBO 45 V PDISS 32 W @ TC = 25 OC TJ -55 OC to+200 OC TSTG -55 OC to+200 OC θθθθ JC 5.5 OC/W PACKAGE STYLE 400 2L FLG (Style 1) |
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