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MSC80213 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MSC80213 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 2 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCER IC = 5.0 mA RBE = 10 Ω 44 V BVCBO IC = 1.0 mA 44 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 22 V 0.5 mA hFE VCE = 5.0 V IC = 250 mA 30 300 COB VCB = 22 V f = 1.0 MHz 5.0 pF Pout PG ηηηη C VCC = 22 V PIN = 0.38 W f = 2.3 GHz 3.8 10 40 W Db % NPN RF TRANSISTOR MSC80213 DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. FEATURES: • Hermetically Sealed Package • Gold Metallization MAXIMUM RATINGS IC 600 mA VCC 26 V VEB 3.5 V PDISS 11.5 W @ TC = 50 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JC 13 OC/W PACKAGE 230 2L FLG 1 = Collector 2 = Emitter 3 = Base |
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