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MSC80278 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MSC80278 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC TRANS1.SYM SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 1.0 mA 50 V BVEBO IE = 1.0 mA 3.5 V ICEO VCE = 18 V 0.5 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- GP Pout = 28 dBm f = 2.0 GHz 1.0 dB COB VCB = 28 V f = 1.0 MHz 3.0 pF NPN RF TRANSISTOR MSC80278 DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. FEATURES: • Emitter Ballasted • Gold Metallization • Hermetically sealed Package MAXIMUM RATINGS IC 300 mA VCEO 20 V PDISS 5.0 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JC 35 OC/W PACKAGE 250 2L FLG 1 = Collector 2 = Emitter 3 = Base |
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Similar Description - MSC80278 |
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