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THX15C Datasheet(PDF) 1 Page - Advanced Semiconductor |
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THX15C Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 55 V BVCES IC = 100 mA VBE = 0 V 110 V BVCBO IC = 100 mA 110 V BVEBO IE = 10 mA 4.0 V ICES VCE = 60 V VBE = 0 V 5.0 mA ICEO VCE = 30 V 5.0 mA hFE VCE = 6.0 V IC = 1.4 A 22.5 27.0 --- Cob VCB = 50 V f = 1.0 MHz 220 pF Pg IMD3 ηηηη C VCE = 50 V Icq = 100 mA f = 30 MHz Pout =150 W (PEP) 14 37 -37 45 -30 dB dBc % NPN SILICON RF POWER TRANSISTOR THX15C DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 10 A VCB 110 V PDISS 233 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθ JC 0.75 °C/W PACKAGE STYLE .550 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE |
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