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ESDALC6V1M6 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1M6 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() 1 Characteristics ESDALC6V1xxM6 2/8 1 Characteristics 1.1 Absolute maximum ratings (Tamb = 25 °C) 1.2 Electrical characteristics (Tamb = 25 °C) Symbol Parameter Value Unit VPP ESD discharge – IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ± 15 ± 8 kV PPP Peak pulse power dissipation (8/20 µs)(1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 30 W Ipp Repetitive peak pulse current typical value (8/20 µs) 3 A Tj Junction temperature 125 °C Tstg Storage temperature range -55 + 150 °C TL Maximum lead temperature for soldering during 10 s 260 °C TOP Operating temperature range -40 + 125 °C Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop Parameter Test Condition Min Typ Max Unit VBR IR = 1 mA 6.1 7.2 V IRM VRM = 3 V 70 nA VF IF = 10 mA 1V Rd 23 Ω αT(1) 1. ∆VBR = αT * (Tamb - 25 °C) * VBR (25 °C) IR = 1 mA, 5 10-4/°C C VR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS 12 15 pF VV V I RM I R I PP V I I F V V Slope= 1/ Rd V V CL V BR RM V F |
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