MSC2295 datasheet(1/1 Pages) ETL

Part #	MSC2295

Description	NPN RF Amplifier Transistors Surface Mount

PDF	1 Pages

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Manufacturer	ETL [E-Tech Electronics LTD]

Direct Link	http://e-tech.com.hk

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N4–1/1

MAXIMUM RATINGS (T A = 25°C)

Rating

Symbol

Value

Unit

Collector-Base Voltage

V(BR)CBO

30

Vdc

Collector-Emitter Voltage

V(BR)CEO

20

Vdc

Emitter-Base Voltage

V(BR)EBO

5.0

Vdc

Collector Current - Continuous

IC

30

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

P D

200

mW

Junction Temperature

T J

150

°C

Storage Temperature

T stg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T A = 2

5°C)

Characteristic

Symbol

Min

Max

Unit

Collector-Base Cutoff Current

I CBO

—

0.1

µAdc

(V CB = 10 Vdc, I E = 0)

DC Current Gain (1)

h FE

—

(V CB = 10 Vdc, I C = –1.0 mAdc)

MSC2295-BT1

70

140

MSC2295-CT1

110

220

Collector-Gain - Bandwidth Product

f T

150

—

MHz

(V CB = 10 Vdc, I E = –1.0 mAdc)

Reverse Transistor Capacitance

Cre

—

1.5

pF

(V CE = 10 Vdc, I C = 1.0 mAdc, f = 10.7 MHz)

1. Pulse Test: Pulse Width < 300 ms, D.C.< 2%.

DEVICE MARKING

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

MSC2295-BT1

MSC2295-CT1

NPN RF Amplifier Transistors

Surface Mount

CASE

318D–03, STYLE1

SC–59

COLLECTOR

3

2

1

BASE

EMITTER

VBX

VCX

Marking Symbol

MSC2295-BT1

MSC2295-CT1

1

3

2

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