IXGP12N60B datasheet(1/2 Pages) IXYS

Part #	IXGP12N60B

Description	HiPerFAST IGBT

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C24A

I

C90

T

C

= 90

°C12

A

I

CM

T

C

= 25

°C, 1 ms

48

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 33 Ω

I

CM = 24A

(RBSOA)

Clamped inductive load, L = 300

µH

@ 0.8 V

CES

P

C

T

C

= 25

°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque with screw M3

0.45/4 Nm/lb.in.

Mounting torque with screw M3.5

0.55/5 Nm/lb.in.

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Weight

4g

IXGA 12N60B

V

CES

= 600 V

IXGP 12N60B

I

C25

=

24 A

V

CE(sat)

= 2.1 V

t

fi(typ)

= 120 ns

Features

l Moderate frequency IGBT and anti-

parallel FRED in one package

l New generation HDMOSTM process

l International standard package

JEDEC TO-220AB and TO-263AA

l High peak current handling capability

Applications

l PFC circuit

l AC motor speed control

l DC servo and robot drives

l Switch-mode and resonant-mode

power supplies

98909 (2/02)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 250

µA, V

GE = 0 V

600

V

GE(th)

I

C

= 250

µA, V

GE = VGE

2.5

5.0

V

I

CES

V

CE = 0.8

V

CES

T

J = 25°C

100

µA

V

GE = 0 V

T

J = 125°C1

mA

I

GES

V

CE

= 0 V, V

GE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

CE90, VGE = 15 V

2.1

V

G

E

C (TAB)

TO-263 AA (IXGA)

G

E

TO-220 AB (IXGP)

C (TAB)

HiPerFASTTM IGBT

Preliminary data sheet

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