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LMH6583 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LMH6583 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V S ±6.2V I IN (Input Pins) ±20mA I OUT (Note 3) Input Voltage Range V − to V+ Maximum Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Soldering Information Infrared or Convection (20 sec.) 235˚C Wave Soldering (10 sec.) 260˚C ESD Tolerance (Note 5) Human Body Model 2000V Machine Model 200V Operating Ratings (Note 1) Operating Temperature −40˚C to +85˚C Supply Voltage Range ±3V to ±5.5V Thermal Resistance θ JA θ JC 64–Pin Exposed Pad TQFP 27˚C/W 0.82˚C/W ±5V Electrical Characteristics (Note 2) Unless otherwise specified, typical conditions are: T A= 25˚C, AV = +2, VS = ±5V, RL = 100 Ω; Boldface limits apply at the tem- perature extremes. Symbol Parameter Conditions Min (Note 8) Typ (Note 7) Max (Note 8) Units Frequency Domain Performance SSBW -3dB Bandwidth V OUT =0.5VPP(Note 11) 500 MHz LSBW V OUT =2VPP 425 GF 0.1dB Gain Flatness V OUT =2VPP 80 MHz DG Differential Gain R L =150 Ω, 3.58MHz/4.43MHz % DP Differential Phase R L = 150 Ω, 3.58MHz/4.43MHz deg Time Domain Response t r RiseTime 0.5V Step, 10% to 90% ns 2V Step, 10% to 90% 1 ns t f Fall Time 0.5V Step, 10% to 90% ns 2V Step, 10% to 90% 1 ns OS Overshoot 2V Step 5 % SR Slew Rate 6V PP, 10% to 90% (Note 6) 3000 V/µs t s Settling Time 4V Step, V outwithin 0.1% ns Distortion And Noise Response HD2 2 nd Harmonic Distortion 2V PP, 5MHz dBc HD3 3 rd Harmonic Distortion 2V PP, 5MHz ) dBc e n Input Referred Voltage Noise >1MHz 7 nV/ i n Input Referred Noise Current >1MHz 2 pA/ Switching Time ns XTLK CrossTalk All Hostile, f=100MHz −50 dBc ISOL Off Isolation f=100MHz −65 dBc Static, DC Performance A V Gain LMH6582 0.989 0.99 0.991 A V Gain LMH6583 1.98 2.00 2.02 V os Output Offset Voltage ±7mV TCV os Output Offset Voltage Average Drift (Note 10) µV/˚C I B Input Bias Current Non-Inverting (Note 9) −7 µA TCI B Input Bias Current Average Drift Non-Inverting (Note 10) nA/˚C V O Output Voltage Range R L = 100 Ω ±3.5 V www.national.com 2 |
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