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BSP75G
SEMICO NDUC TORS
DRAFT ISSUE C - NOVEMBER 2003
ADVANCE INFORMATION
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R JA
50
°C/W
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous drain-source voltage
VDS
60
V
Drain-source voltage for short circuit protection
VDS(SC)
36
V
Continuous input voltage
VIN
-0.2 ... +10
V
Peak input voltage
VIN
-0.2 ... +20
V
Operating temperature range
Tj,
-40 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Power dissipation at TA =25°C
PD
2.5
W
Continuous drain current @ VIN=10V; TA=25°C
2
ID
1.6
A
Pulsed drain current @ VIN=10V
IDM
3A
Unclamped single pulse inductive energy
EAS
550
mJ
Load dump protection
VLoadDump
80
V
Electrostatic discharge (Human Body Model)
VESD
4000
V
NOTES
2 For a device surface mounted on FR4 PCB measured at t 10s
ABSOLUTE MAXIMUM RATINGS
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