APM4536K datasheet(3/13 Pages) ANPEC

3 / 13 page

Rev. B.1 - Mar., 2005

www.anpec.com.tw

APM4536K

Electrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

APM4536K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Diode Characteristics

ISD=1.7A , VGS=0V

N-Ch

0.8

1.3

VSD

Diode Forward Voltage

ISD=-1.7A , VGS=0V

P-Ch

-0.8

-1.3

Dynamic Characteristics

N-Ch

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

P-Ch

Ω

N-Ch

360

Ciss

Input Capacitance

P-Ch

650

N-Ch

Coss

Output Capacitance

P-Ch

145

N-Ch

Crss

Reverse Transfer

Capacitance

N-Channel

VGS=0V,

VDS=25V,

Frequency=1.0MHz

P-Channel

VGS=0V,

VDS=-25V,

Frequency=1.0MHz

P-Ch

N-Ch

td(ON)

Turn-on Delay Time

P-Ch

N-Ch

Turn-on Rise Time

P-Ch

N-Ch

td(OFF)

Turn-off Delay Time

P-Ch

N-Ch

Turn-off Fall Time

N-Channel

VDD=15V, RL=15

Ω,

IDS=1A, VGEN=10V,

RG=6

Ω

P-Channel

VDD=-15V, RL=15

Ω,

IDS=-1A, VGEN=-10V,

RG=6

Ω

P-Ch

Gate Charge Characteristics

N-Ch

14.5

Total Gate Charge

P-Ch

N-Ch

4.3

Qgs

Gate-Source Charge

P-Ch

5.1

N-Ch

2.3

Qgd

Gate-Drain Charge

N-Channel

VDS=15V, VGS=10V,

IDS=5A

P-Channel

VDS=-15V, VGS=-10V,

IDS=-5A

P-Ch

3.3

Notes:

a : Pulse test ; pulse width

≤300

µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

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