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DN200F Datasheet(PDF) 2 Page - AUK corp |
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DN200F Datasheet(HTML) 2 Page - AUK corp |
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2 / 4 page ![]() KST-2125-002 2 DN200F Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-Base voltage VEBO 5 V Collector current IC 2 A PC 0.5 Collector power dissipation PC* 2 W Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50 ㎂, IE=0 15 - - V Collector-Emitter breakdown voltage BVCEO IC=1 ㎃, IB=0 12 - - V Emitter-Base breakdown voltage BVEBO IE=50 ㎂, IC=0 5 - - V Collector cut-off current ICBO VCB=12V, IE=0 - - 0.1 ㎂ Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 ㎂ hFE1 VCE=1V, IC=100 ㎃ 200 - 450 - DC current gain hFE2 VCE=1V, IC=2A 40 - - - Collector-Emitter saturation voltage VCE(sat) IC=1A, IB=50 ㎃ - - 0.3 V Base-Emitter saturation voltage VBE(sat) IC=1A, IB=50 ㎃ - - 1.2 V Transition frequency fT VCE=5V, IC=50 ㎃ - 260 - ㎒ Collector output capacitance Cob VCB=10V, IE=0, f=1 ㎒ - 5 - ㎊ |
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