AP1510

Document number: DS31018 Rev. 8 - 2

3 of 9

www.diodes.com

December 2017

© Diodes Incorporated

AP1510

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

VCC

VCC Pin Voltage

VSS - 0.3 to VSS + 25

V

VFB

FB Pin Voltage

VSS - 0.3 to VCC

V

VEN

EN Pin Voltage

VSS - 0.3 to VIN + 0.3

V

VOUT

Output Pin Voltage

VSS - 0.3 to VIN + 0.3

V

PD

Power Dissipation

Internally Limited

mW

TOP

Operating Junction Temperature Range

-20 to +125

°C

TST

Storage Temperature Range

-65 to +150

°C

Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded

under any conditions.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

VIN

Input Voltage

3.6

23

V

IOUT

Output Current

0

3

A

TA

Operating Ambient Temperature

-25

+85

°C

Electrical Characteristics (VIN = 12V, TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VFB

Feedback Voltage

IOUT = 0.1A

0.784

0.8

0.816

V

IFB

Feedback Bias Current

IOUT = 0.1A

—

0.1

0.5

µA

ISW

Switch Current

—

3.5

—

—

A

ISHDN

Current Consumption During Power Off

VEN = 0V

—

10

—

µA

∆VOUT

/VIN

Line Regulation

VIN = 5V to 23V, IOUT = 0.2A

—

1

2

%

∆VOUT

/VOUT

Load Regulation

IOUT = 0.1 to 3A

—

0.2

0.5

%

fOSC

Oscillation Frequency

Measure waveform at Output pin

240

300

360

kHz

fOSC1

Frequency of Current Limit or Short

Circuit Protect

Measure waveform at Output pin

10

—

—

kHz

VIH

EN Pin Input Voltage

Evaluate oscillation at Output pin

2.0

—

—

V

VIL

Evaluate oscillation stop at Output pin

—

—

0.8

IENH

EN Pin Input Leakage Current

—

—

20

—

µA

IENL

—

—

-10

—

µA

IOCSET

OCSET Pin Bias Current

—

75

90

105

µA

tSS

Soft-Start Time

—

0.3

2

5

ms

TSHDN

Thermal Shutdown Threshold

—

—

+150

—

°C

THYS

Thermal Shutdown Hysteresis

—

—

+55

—

°C

RDSON

Internal MOSFET RDSON

VIN = 5V, VFB = 0V

—

110

150

m

Ω

VIN = 12V, VFB = 0V

—

70

100

EFFI

Efficiency

VIN = 12V, VOUT = 5V

IOUT = 3A

—

91

—

%

θJA

Thermal Resistance Junction-to-Ambient SO-8 (Note 4)

—

134

—

°C/W

θJC

Thermal Resistance Junction-to-Case

SO-8 (Note 4)

—

22

—

°C/W

Note:

4. Test condition: Device mounted on FR-4 substrate 2oz copper, minimum recommended pad layout, single side.

For better thermal performance, please arrange larger copper pad of layout for heatsink.