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2SC1815 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # 2SC1815
Description  SILICON NPN TRANSISTORS
PDF  3 Pages
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2SC1815 Datasheet(HTML) 1 Page - Central Semiconductor Corp

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2SC1815
2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
SILICON NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2SC1815 Series
are silicon NPN transistors, manufactured by the
epitaxial planar process, designed for general purpose
amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
150
mA
Power Dissipation
PD
400
mW
Operating and Storage Junction Temperature
TJ, Tstg
-55 to +125
°C
Thermal Resistance
JA
250
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
100
nA
ICEO
VCE=50V
100
nA
IEBO
VEB=5.0V
100
nA
BVCBO
IC=100μA
60
V
BVCEO
IC=100μA
50
V
BVEBO
IE=100μA
5.0
V
VCE(SAT)
IC=100mA, IB=10mA
0.25
V
VBE(SAT)
IC=100mA, IB=10mA
1.0
V
VBE
IE=310mA
1.45
V
hFE
VCE=6.0V, IC=2.0mA (2SC1815)
70
700
hFE
VCE=6.0V, IC=2.0mA (2SC1815-O)
70
140
hFE
VCE=6.0V, IC=2.0mA (2SC1815-Y)
120
240
hFE
VCE=6.0V, IC=2.0mA (2SC1815-GR)
200
400
hFE
VCE=6.0V, IC=2.0mA (2SC1815-BL)
350
700
fT
VCE=10V, IC=1.0mA, f=30MHz
80
MHz
TO-92 CASE
R1 (10-May 2018)
www.centra lsemi.com


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