MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)

SYMBOL

UNITS

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS Q1: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

60

V

Drain-Gate Voltage

VDG

60

V

Gate-Source Voltage

VGS

40

V

Continuous Drain Current

ID

280

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.5

A

Maximum Pulsed Source Current

ISM

1.5

A

MAXIMUM RATINGS D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤ 1ms

IFRM

3.5

A

Forward Surge Current, tp=8ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF

VGS=20V, VDS=0V

100

nA

IGSSR

VGS=20V, VDS=0V

100

nA

IDSS

VDS=60V, VGS=0V

1.0

µA

IDSS

VDS=60V, VGS=0V, Tj=125°C

500

µA

ID(ON)

VGS=10V, VDS ≥ 2VDS(ON)

500

mA

BVDSS

VGS=0V, ID=10µA

60

V

VGS(th)

VDS=VGS, ID=250µA

1.0

2.5

V

VDS(ON)

VGS=10V, ID=500mA

1.0

V

VDS(ON)

VGS=5.0V, ID=50mA

0.15

V

rDS(ON)

VGS=10V, ID=500mA

2.0

Ω

rDS(ON)

VGS=10V, ID=500mA, Tj=125°C

3.5

Ω

rDS(ON)

VGS=5.0V, ID=50mA

3.0

Ω

rDS(ON)

VGS=5.0V, ID=50mA, Tj=125°C

5.0

Ω

gFS

VDS ≥ 2VDS(ON), ID=200mA

80

mmhos

CMLM0205

SURFACE MOUNT

N-CHANNEL MOSFET AND

LOW VF SILICON SCHOTTKY DIODE

SOT-563 CASE

Central

Semiconductor Corp.

TM

R0 (12-October 2004)

DESCRIPTION:

The Central Semiconductor CMLM0205 is a

N-Channel MOSFET and a Low VF Schottky diode

packaged in a space saving PICOmini™ SOT-563

case. This device is designed for small signal

general purpose applications where size and

operational efficiency are prime requirements.

• Combination: N-Channel MOSFET and

Low VF Schottky Diode.

MARKING CODE: C25

TM