MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)

SYMBOL

UNITS

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS Q1: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

200

mA

MAXIMUM RATINGS D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤ 1ms

IFRM

3.5

A

Forward Surge Current, tp=8ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICEV

VCE=30V, VEB=3.0V

-

-

50

nA

BVCBO

IC=10µA

60

120

-

V

BVCEO

IC=1.0mA

40

60

-

V

BVEBO

IE=10µA

6.0

7.5

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.057

0.100

V

VCE(SAT)IC=50mA, IB=5.0mA

0.090

0.200

V

VBE(SAT)IC=10mA, IB=1.0mA

0.65

0.75

0.85

V

VBE(SAT)IC=50mA, IB=5.0mA

0.85

0.95

V

hFE

VCE=1.0V, IC=0.1mA

90

180

hFE

VCE=1.0V, IC=1.0mA

100

185

hFE

VCE=1.0V, IC=10mA

100

180

300

hFE

VCE=1.0V, IC=50mA

70

150

hFE

VCE=1.0V, IC=100mA

30

90

fT

VCE=20V, IC=10mA, f=100MHz

300

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

8.0

pF

hie

VCE=10V, IC=1.0mA, f=1.0kHz

1.0

12

k

Ω

hre

VCE=10V, IC=1.0mA, f=1.0kHz

0.1

10

X10-4

CMLM0405

SURFACE MOUNT

LOW VCE (SAT) SILICON NPN TRANSISTOR

AND

LOW VF SILICON SCHOTTKY DIODE

SOT-563 CASE

Central

Semiconductor Corp.

TM

R1 (22-February 2005)

DESCRIPTION:

The Central Semiconductor CMLM0405 is a single

NPN Transistor and Schottky Diode packaged in a

space saving SOT-563 case and designed for small

signal general purpose applications where size and

operational efficiency are prime requirements.

• Complementary Device: CMLM0605

• Combination Low VCE (SAT) Transistor and

Low VF Schottky Diode.

MARKING CODE: C45

TM