MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)

SYMBOL

UNITS

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS Q1: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

1.0

A

Collector Current (Peak)

ICM

1.5

A

MAXIMUM RATINGS D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤ 1ms

IFRM

3.5

A

Forward Surge Current, tp = 8ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=40V

100

nA

IEBO

VEB=6.0V

100

nA

BVCBO

IC=100µA

40

V

BVCEO

IC=10mA

25

V

BVEBO

IE=100µA

6.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

25

50

mV

VCE(SAT)

IC=100mA, IB=10mA

40

75

mV

VCE(SAT)

IC=200mA, IB=20mA

80

150

mV

VCE(SAT)

IC=500mA, IB=50mA

150

250

mV

VCE(SAT)

IC=800mA, IB=80mA

220

400

mV

VCE(SAT)

IC=1.0A, IB=100mA

275

450

mV

VBE(SAT)

IC=800mA, IB=80mA

1.1

V

VBE(ON)

VCE=1.0V, IC=10mA

0.9

V

CMLM7405

SURFACE MOUNT

HIGH CURRENT

LOW VCE (SAT) SILICON PNP TRANSISTOR

AND

LOW VF SILICON SCHOTTKY DIODE

SOT-563 CASE

Central

Semiconductor Corp.

TM

R0 (23-March 2005)

DESCRIPTION:

The Central Semiconductor CMLM7405 is a single

PNP Transistor and Schottky Diode packaged in a

space saving SOT-563 case is designed for small

signal general purpose applications where size and

operational efficiency are prime requirements.

• Complementary Device: CMLM3405

• Combination High Current Low VCE (SAT)

Transistor and Low VF Schottky Diode.

MARKING CODES: C57

TM