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TTC018 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TTC018
Description  Bipolar Transistors Silicon NPN Triple-Diffused Type
PDF  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTC018 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TTC018
2
5. Electrical Charcteristics
5.1. Static Charcteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Test Condition
VCB = 500 V, IE = 0 A
VEB = 7 V, IC = 0 A
IC = 1 mA, IB = 0 A
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 100 mA
IC = 20 mA, IB = 2 mA
IC = 20 mA, IB = 2 mA
Min
�
�
500
100
10
�
�
Typ.
�
�
�
�
�
�
�
Max
1
100
�
300
�
0.3
1.0
Unit
µA
nA
V
�
V
V
5.2. Dynamic Charcteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
Collector output capacitance
Symbol
Cob
Test Condition
VCB = 10 V, IE = 0 A, f = 1 MHz
Min
�
Typ.
8
Max
�
Unit
pF
6. Marking (Note)
Fig. 6.1
Marking (Note)
Note:
A line beside a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2021-06-24
Rev.1.0
©2021
Toshiba Electronic Devices & Storage Corporation



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