| Electronic Components Datasheet Search |
|
TTC021 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
TTC021 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
|
1 / 7 page ![]() TTC021 1 Bipolar Transistors Silicon NPN Epitaxial Type TTC021 Start of commercial production 2022-10 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter 2022-10-12 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation |
Similar Part No. - TTC021 |
|
Similar Description - TTC021 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |