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CMPT2907AE Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPT2907AE Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=125°C 10 µA ICEV VCE=30V, VEB=0.5V 50 nA BVCBO IC=10µA 90 115 V BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.103 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.280 0.7 V VBE(SAT) IC=150mA, IB=15mA 1.3 V VBE(SAT) IC=500mA, IB=50mA 2.6 V hFE VCE=10V, IC=0.1mA 100 205 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 75 110 fT VCE=20V, IC=50mA, f=100MHz 200 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VBE=2.0V, IC=0, f=1.0MHz 30 pF CMPT2907AE ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R1 (20-February 2003) DESCRIPTION: The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C2FE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 60V min to 90V min. (115V TYP) ♦ VCE(SAT) from 1.6V max to 0.7V max.(0.280V TYP) ♦ hFE from 50 min to 75 min. (110 TYP) ♦ ♦ Enhanced specification. ♦ ♦ ♦ ♦ ♦ |
Similar Part No. - CMPT2907AE |
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Similar Description - CMPT2907AE |
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