CMPT5551HC datasheet(1/2 Pages) CENTRAL

Part #	CMPT5551HC

Description	SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=120V

50

nA

ICBO

VCB=120V, TA=100°C

50

µA

IEBO

VEB=4.0V

50

nA

BVCBO

IC=100µA

180

V

BVCEO

IC=1.0mA

160

V

BVEBO

IE=10µA

6.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.15

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.20

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.00

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.00

V

hFE

VCE=5.0V, IC=1.0mA

80

hFE

VCE=5.0V, IC=10mA

80

250

hFE

VCE=5.0V, IC=50mA

30

hFE

VCE=10V, IC=1.0A

10

fT

VCE=10V, IC=10mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF

CMPT5551HC

SURFACE MOUNT

HIGH CURRENT

SILICON NPN TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R0 (28-January 2005)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551HC

type is a high current NPN silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for high voltage and high current amplifier

applications.

MARKING CODE: 1FHC

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