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CP309 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP309 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES CMPT3090L CXT3090L CZT3090L CMXT3090L GEOMETRY PROCESS DETAILS R2 (15- September 2003) Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GROSS DIE PER 4 INCH WAFER 6,670 Central Semiconductor Corp. TM PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip Central Semiconductor Corp. TM |
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