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CP591V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP591V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY BACKSIDE COLLECTOR R1 Central Semiconductor Corp. TM PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (31-May 2006) GROSS DIE PER 4 INCH WAFER 30,600 |
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