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CPD06 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD06 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 1N5400 thru 1N5408 1N5550 thru 1N5554 1N5624 thru 1N5627 CMR3-02 Series GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R2 (16- September 2003) Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 1,490 Central Semiconductor Corp. TM PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip |
Similar Part No. - CPD06 |
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Similar Description - CPD06 |
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