CQ39BS

CQ39DS

CQ39MS

CQ39NS

TRIAC

4.0 AMP, 200 THRU 800 VOLTS

TO-39 CASE

Central

Semiconductor Corp.

TM

R1 (18-August 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ39BS

series type is a hermetically sealed silicon Triac

designed for full wave AC control applications

featuring gate triggering in all four (4) quadrants.

MARKING CODE: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CQ39BS CQ39DS CQ39MS CQ39NS

UNITS

Peak Repetitive Off-State Voltage

VDRM

200

400

600

800

V

RMS On-State Current (TC=80°C)

IT(RMS)

4.0

A

Peak One Cycle Surge (t=10ms)

ITSM

35

A

2.0

Peak Gate Power (tp=10µs)

PGM

3.0

W

Average Gate Power Dissipation

PG(AV)

0.2

W

Peak Gate Current (tp=10µs)

IGM

1.2

A

Storage Temperature

Tstg

-40 to +150

°C

Junction Temperature

TJ

-40 to +125

°C

Thermal Resistance

ΘJA

160

°C/W

Thermal Resistance

ΘJC

9.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM

Rated VDRM, RGK=1KΩ

10

µA

IDRM

Rated VDRM, RGK=1KΩ, TC=125°C

200

µA

IGT

VD=12V, QUAD I, II, III

2.5

5.0

mA

IGT

VD=12V, QUAD IV

5.5

9.0

mA

IH

RGK=1KΩ

1.6

5.0

mA

VGT

VD=12V, QUAD I, II, III, IV

2.0

V

VTM

ITM=6.0A, tp=380µs

1.75

V

dv/dt

11

V/µs