1997 Apr 11

2

Philips Semiconductors

Product specification

NPN medium power transistor

2N1613

FEATURES

• Low current (max. 500 mA)

• Low voltage (max. 50 V).

APPLICATIONS

• High-speed switching and amplification.

DESCRIPTION

NPN medium power transistor in a TO-39 metal package.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1

Simplified outline (TO-39) and symbol.

handbook, halfpage

3

1

2

MAM317

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

75

V

collector-emitter voltage

open base

−

50

V

peak collector current

−

1A

total power dissipation

−

0.8

W

DC current gain

40

120

transition frequency

−

MHz