2N2222 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 29

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

2N2222; 2N2222A

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

2N2222

IE = 0; VCB =50V

−

IE = 0; VCB = 50 V; Tamb = 150 °C

−

µA

ICBO

collector cut-off current

2N2222A

IE = 0; VCB =60V

−

IE = 0; VCB = 60 V; Tamb = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =3V

−

hFE

DC current gain

IC = 0.1 mA; VCE =10V

−

IC = 1 mA; VCE =10V

−

IC = 10 mA; VCE =10V

−

IC = 150 mA; VCE = 1 V; note 1

−

IC = 150 mA; VCE = 10 V; note 1

100

300

hFE

DC current gain

IC = 10 mA; VCE = 10 V; Tamb = −55 °C

2N2222A

−

hFE

DC current gain

IC = 500 mA; VCE = 10 V; note 1

2N2222

−

2N2222A

−

VCEsat

collector-emitter saturation voltage

2N2222

IC = 150 mA; IB = 15 mA; note 1

−

400

IC = 500 mA; IB = 50 mA; note 1

−

1.6

VCEsat

collector-emitter saturation voltage

2N2222A

IC = 150 mA; IB = 15 mA; note 1

−

300

IC = 500 mA; IB = 50 mA; note 1

−

VBEsat

base-emitter saturation voltage

2N2222

IC = 150 mA; IB = 15 mA; note 1

−

1.3

IC = 500 mA; IB = 50 mA; note 1

−

2.6

VBEsat

base-emitter saturation voltage

2N2222A

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

IC = 500 mA; IB = 50 mA; note 1

−

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz

2N2222A

−

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

2N2222

250

−

MHz

2N2222A

300

−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

2N2222A

−

4dB

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