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BD237-S Datasheet(PDF) 1 Page - Continental Device India Limited

Part # BD237-S
Description  NPN EPITAXIAL SILICON POWER TRANSISTOR
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BD237-S Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN EPITAXIAL SILICON POWER TRANSISTOR
BD237-S
TO126
Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNIT
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current
IC
A
Collector Peak Current
ICM
A
Total Dissipation @ Ta=25ºC
PD
W
Storage Temperature
Tstg
ºC
Operating Junction Temperature
Tj
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
IC=10µA, IE=0
120
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
95
V
Collector Emitter Saturation Voltage
*VCE (sat)
IC=2A, IB=200mA
0.15
0.4
V
Base Emitter Saturation Voltage
*VBE (sat)
IC=2A, IB=200mA
0.9
1.2
V
Collector Cut Off Current
ICBO
VCB=100V, IE=0
1.0
µA
Emitter Cut Off Current
IEBO
VEB=4V, IC=0
1.0
µA
DC Current Gain
*hFE
IC=1A, VCE=2V
90
260
IC=2A, VCE=2V
35
IC=3A, VCE=2V
18
Current Gain Bandwidth Product
fT
IC=250mA, VCE=10V
3
MHz
*Pulsed Pulse Duration=300
µµs, Duty Cycle=1.5%
BD237S Rev_1 111204E
- 65 to +150
150
VALUE
120
95
6.0
2.0
8.0
1.30
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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