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IRFPE50 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IRFPE50
Description  isc N-Channel Mosfet Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFPE50 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel Mosfet Transistor
IRFPE50
FEATURES
·
Drain Current : ID= 7.8A@ TC=25℃
·
Drain Source Voltage
: VDSS= 800V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching power supplies,converters,AC and DC motor controls.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
7.8
A
IDM
Drain Current-Single Plused
31
A
PD
Total Dissipation @TC=25℃
190
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.65
℃
/W
RJA
Junction-to-Ambient
40
℃
/W


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