C45C5 datasheet(1/3 Pages) CDIL

Part #	C45C5

Description	PNP SILICON EPITAXIAL POWER TRANSISTORS

PDF	3 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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PNP SILICON EPITAXIAL POWER TRANSISTORS

C45C5,11

TO-220

Designed for Various Specific and General Purpose Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

C45C5

C45C11

UNIT

Collector -Emitter Voltage

VCEO

45

80

V

Collector -Emitter Voltage

VCES

55

90

V

Emitter Base Voltage

VEBO

5

V

Collector Current Continuous

IC

4

A

Peak*

ICM

6

A

Base Current

IB

2

A

Power Dissipation @ Ta=25 deg C

PD

1.67

W

Power Dissipation @ Tc=25 deg C

30

W

Operating and Storage Junction

Tj, Tstg

-55 to +150

55 to +150

deg C

Temprature Range

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)

75

deg C

Junction to Case

Rth(j-c)

4.2

deg C

ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Sustaining Voltage

VCEO(sus)* IC=100mA, IB=0

C45C5

45

-

V

C45C11

80

-

V

Collector Cutt off Current

ICES

VCE=Rated VCES

-

10

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

100

uA

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=1A, IB=50mA

-

0.5

V

Base Emitter Saturation Voltage

VBE(Sat)*

IC=1A, IB=100mA

-

1.3

V

Dc Current Gain

hFE*

IC=0.2A, VCE=1V

40

-

120

IC=1A, VCE=1V

20

-

Dynamic Characteristics

Transition Frequency

ft

VCE=4V, IC=20mA

-

40

-

MHz

Collector Output Capacitance

Ccbo

VCB=10V, IE=0

-

125

pF

f=1MHz

Switching Time

Delay Time

td +tr

-

50

-

ns

Rise Time

IC= 1A, IB1=1B2

Storage Time

ts

0.1A, VCC=30V,

-

500

-

ns

Fall Time

tf

tp=25 usec

-

50

-

ns

*Pulse Test Pulse Width =300ms, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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