SILICON EPITAXIAL GENERAL SWITCHING DIODE

CMBD99

SOT-23

MARKING : C7

Silicon Epitaxial General Switching Double Diode Series.

ABSOLUTE MAXIMUM RATINGS (per diode)

DESCRIPTION

SYMBOL

VALUE

UNIT

Repetitive Peak Reverse Voltage

VRM

35

V

Continuous Reverse Voltage

VR

30

V

Non- Repetitive Peak Forward Current t=1us

IFSM

4.0

A

Peak Forward Current

IFM

300

mA

Average Forward Current

IO

100

mA

Power Dissipation Ta=25 deg C

PT

150

mW

Junction Temperature

Tj

125

deg C

Storage Temperature

Tstg

-55 to +125

deg C

ELECTRICAL CHARACTERISTICS (per diode) (Ta=25 deg C Unless otherwise noted)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Reverse Voltage Leakage Current

IR

VR=30V

-

-

100

nA

Forward Voltage

VF

IF=10mA

-

-

1.0

V

IF=50mA

-

-

1.2

V

IF=100mA

-

-

1.4

V

Diode Capacitance

CD

VR=0V, f=1MHz

-

-

4.0

pF

3

Pin Configuration

1 = ANODE

2 =

3 =

CATHODE

CATHODE

ANODE/

1

2

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company