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CMBT200 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CMBT200
Description  PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBT200 Datasheet(HTML) 1 Page - Continental Device India Limited

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PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CMBT200
CMBT200A
SOT23
MARKING : AS BELOW
Designed for General Purpose Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
VCBO
60
V
Collector -Emitter Voltage
VCEO
45
V
Emitter Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
500
mA
Power Dissipation
PD
350
mW
Derate Above=25 deg C
2.8
mW/deg C
Operating And Storage Junction
Tj, Tstg
-55 to +150
deg C
Temperature Range
Thermal Resistance
Junction to Ambient
(Rth j-a)
357
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX
UNIT
Collector -Base Voltage
VCBO
IC=10uA, IE=0
60
-
V
Collector -Emitter Voltage
VCEO
IC=1mA, IB=0
45
-
V
Emitter Base Voltage
VEBO
IE=10uA, IC=0
6.0
-
V
Collector Cut off Current
ICBO
VCB=50V, IE=0
-
50
nA
ICES
VCE=4V, IE=0
-
50
nA
Emitter Cut off Current
IEBO
VEB=4V, IC=0
-
50
nA
DC Current Gain
hFE
IC=100uA,VCE=1V
CMBT200
80
-
CMBT200A
240
-
IC=10mA,VCE=1V
CMBT200
100
450
CMBT200A
300
600
IC=100mA,VCE=1V*
CMBT200A
100
-
IC=150mA,VCE=5V*
CMBT200
100
350
CMBT200A
100
-
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company


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