CMBT2369 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCB0

max.

40 V

Collector–emitter voltage (VBE = 0)

VCES

max.

40 V

Collector–emitter voltage (open base)

VCE0

max.

15 V

Emitter–base voltage (open collector)

VEB0

max.

4,5 V

Collector current (d.c. value)

max.

500 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to 150° C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient in free air

Rth j–a

500 K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 20 V

ICB0

400 nA

IE = 0; VCB = 20V; Tj = 125°C

ICB0

<30

µA

Saturation voltages

IC = 10 mA; lB = 1 mA

VCEsat

0,25 V

VBEsat

0,70 to 0,85 V

D.C. current gain

IC = 10mA; VCE = 1 V

hFE

40 to 120

IC = 10mA; VCE = 1 V; Tamb = –55°C

hFE

>20

IC = 100 mA; VCE = 2 V

hFE

>20

Output capacitance at f = 1 MHz

IE = 0; VCB = 5V

4,0 pF

Small–signal current gain

IC = 1,0mA; VCE = 10V; f = 100MHz; Tamb = 25°C

hfe

5,0

Breakdown voltages

IC = 10 mA; lB = 0

V(BR)CEO min.

15 V

IC = 10µA; IE = 0

V(BR)CBO min.

40 V

IC = 0; IE = 10µAV(BR)EBO min.

4,5 V

IC = 10µA; VBE = 0

V(BR)CES min.

40 V

Switching times at Tamb = 25 °C

Storage time

typ.

5,0 ns

ICon = IBon = –IBoff = 10 mA

<13 ns

Turn–on time

ton

typ.

8,0 ns

IC = 10mA; IBon = 3mA; VCC = 3V

ton

<12 ns

Turn–off time

toff

typ.

10 ns

IC = 10mA; IBon = 3mA; IBoff = 1,5mA; VCC = 3V

toff

<18 ns

CMBT2369

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