1995 Oct 27

2

Philips Semiconductors

Product specification

Silicon planar epitaxial

overlay transistors

2N3866; 2N4427

DESCRIPTION

NPN overlay transistors in TO-39 metal packages with the

collector connected to the case. The devices are primarily

intended for class-A, B or C amplifiers, frequency multiplier

and oscillator circuits.

APPLICATIONS

• The transistors are intended for use in output, driver or

pre-driver stages in VHF and UHF equipment.

PINNING - TO-39/1

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1 Simplified outline.

handbook, halfpage

MBB199

1

2

3

QUICK REFERENCE DATA

RF performance

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter voltage

2N3866

−

55

V

2N4427

−

40

V

collector-emitter voltage

open base

2N3866

−

30

V

2N4427

−

20

V

emitter-base voltage

open collector

2N3866

−

3.5

V

2N4427

−

2.0

V

collector current (DC)

−

0.4

A

average collector current

measured over any 20 ms

period

−

0.4

A

total power dissipation

−

3.5

W

transition frequency

f = 200 MHz

500

−

MHz

junction temperature

−

200

°C

TYPE NUMBER

f

(MHz)

(V)

(W)

(dB)

η

(%)

2N3866

400

28

1

>10

>45

2N4427

175

12

1

>10

>50