CMBT5400 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Total power dissipation at Tamb = 25°C

Ptot

max

250 mW

Storage temperature

Tstg

–55 to +150 ° C

Junction temperature

max.

150 ° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

200 °C/mW

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

–IC = 1 mA; IB = 0

–V(BR)CEO min.

120 V

Collector–base breakdown voltage

–IC = 100 µA; IE = 0

–V(BR)CBO min.

130 V

Emitter–base breakdown voltage

–IE = 10 µA; IC = 0

–V(BR)EBO min.

5 V

Collector cut–off current

–VCB = 100 V; IE = 0 V

–ICBO

max.

100 nA

Emitter cut-off current

–VEB = 3V; IC = 0

–IEBO

max.

50 nA

Output capacitance at f = 1 MHz

IE = 0; –VCB = 10 V

max.

6 pF

Saturation voltages

–IC = 10 mA; –IB = 1 mA

–VCEsat

max.

0.2 V

–VBEsat

max.

1 V

–IC = 50 mA; –IB = 5 mA

–VCEsat

max.

0.5 V

–IC = 50 mA; –IB = 5 mA

–VBEsat

max.

1 V

D.C. current gain

–IC = 1 mA; –VCE = 5 V

hFE

min.

–IC = 10 mA; –VCE = 5 V

hFE

min.

max.

180

–IC = 50 mA; –VCE = 5 V

hFE

min.

Noise figure at RS = 1 kΩ

–IC = 200 µA; –VCE = 5 V

f = 10 Hz to 15.7 kHz

max.

8 dB

CMBT5400

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