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CMBT5550 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CMBT5550
Description  SILICON N-P-N HIGH-VOLTAGE TRANSISTOR
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBT5550 Datasheet(HTML) 1 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5550 = 1F
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
VCBO
max.
160 V
Collector–emitter voltage (open base)
VCEO
max.
140 V
Collector current
IC
max.
600 mA
Total power dissipation up to Tamb = 25°C
Ptot
max
250 mW
Collector–emitter saturation voltage
IC = 50 mA; IB = 5 mA
VCEsat
max.
0.25 V
D.C. current gain
IC = 10 mA; VCE = 5 V
hFE
60 to 250
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
VCBO
max.
160 V
Collector–emitter voltage (open base)
VCEO
max.
140 V
Emitter–base voltage (open collector)
VEBO
max.
6 V
Collector current
IC
max.
600 mA
CMBT5550
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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