2N4036 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jun 19

Philips Semiconductors

Product speciﬁcation

PNP switching transistor

2N4036

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−90

VCEO

collector-emitter voltage

open base

−−65

VEBO

emitter-base voltage

open collector

−−7V

collector current (DC)

−−1A

ICM

peak collector current

−−1A

IBM

peak base current

−−500

Ptot

total power dissipation

Tmb ≤ 25 °C

−

Tstg

storage temperature

−55

+200

°C

junction temperature

−

200

°C

Tamb

operating ambient temperature

−55

+200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-c

thermal resistance from junction to case

in free air

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−−50

IE = 0; VCB = −60 V; Tamb = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−50

hFE

DC current gain

IC = −0.1 mA; VCE = −10 V

−

IC = −150 mA; VCE = −2 V

200

IC = −150 mA; VCE = −10 V

140

IC = −150 mA; VCE = −10 V;

Tamb =55 °C

−

VCEsat

collector-emitter saturation voltage

IC = −150 mA; IB = −15 mA

−−650

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA

−−1.4

VBEon

base-emitter on-stage voltage

IC = −150 mA; VCE = −10 V

−−1.5

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

transition frequency

IC = −50 mA; VCE = −10 V; f = 100 MHz 60

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −150 mA; IBon = −15 mA;

IBoff =15mA

−

110

rise time

−

toff

turn-off time

−

700

storage time

−

600

fall time

−

100

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