CMBT8599 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Total power dissipation at Tamb = 25°C Ptot

max

225

Storage temperature

Tstg

–55 to +150 ° C

Junction temperature

max.

150 ° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

556

°C/mW

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

–IC = 1 mA; –IE = 0

–V(BR)CEO min.

80 V

Collector–base breakdown voltage

–IC = 10 mA; –IE = 0

–V(BR)CBO min.

80 V

Emitter–base breakdown voltage

–IE = 10 mA; –IC = 0

–V(BR)EBO min.

Collector cut–off current

–VCB = 20 V; –IE = 0

–ICBO

max.

50 nA

Emitter cut–off current

–VBE = 3 V; –IC = 0

–IEBO

max.

50 nA

Output capacitance at f = 100 kHz

IE = 0; –VCB = 5 V

max. 4.5

4.5 pF

Input capacitance at f = 100 kHz

IC = 0; –VBE = 0.5 V

max.

30 pF

Saturation voltages

–IC = 100 mA; –IB = 5 mA

–VCEsat

max. 0.4

0.4 V

Base emitter voltage

IC = 1 mA; VCE = 5 V;

VBE(on)

max. 0.7

IC = 10 mA; VCE = 5 V

max.

0.9 V

D.C. current gain

–IC = 1 mA; –VCE = 5 V

hFE

min.

100

max.

300

–IC = 10 mA; –VCE = 5 V

hFE

min.

100

–IC = 100 mA; –VCE = 5 V

hFE

min.

Noise figure at RS = 1 kW

–IC = 100 mA; –VCE = 5 V

f = 10 Hz to 15.7 kHz

max.

Transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz fT

min.

150

MHz

max.

225

MHz

CMBT8598

CMBT8599

CMBT8599 Datasheet(PDF) 2 Page - Continental Device India Limited

CMBT8599 Datasheet(HTML) 2 Page - Continental Device India Limited

Html Pages

1 2 3

Datasheet Download

Link URL