CMBTA92 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

CMBT A92

A93

Collector–base voltage (open emitter)

–VCBO

max. 300

200 V

Collector–emitter voltage (open base)

–VCEO

max. 300

200 V

Emitter–base voltage (open collector)

–VEBO

max.

Collector current (d.c.)

–I C

max.

500

Total power dissipation up to Tamb = 25 °C Ptot

max

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

500

K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

–IC = 1 mA; IB = 0

–V(BR)CEO min. 300

200 V

Collector–base breakdown voltage

–IC = 100 µA; IE = 0

–V(BR)CBO min. 300

200 V

Collector cut–off current

–VCB = 200 V; IE = 0

–ICBO

max. 0.25

–

µA

–VCB = 160 V; IE = 0

–ICBO

max. –

0.25

µA

Emitter–base breakdown voltage

–IE = 100 µA; IC = 0

–V(BR)EBO min.

Emitter cut–off current

IC = 0; –VBE = 3 V;

–IEBO

max. 0.1

0.1 mA

Collector–base capacitance at f= 1 MHz

IE = 0; –VCB = 20 V

Ccb

max.

8 pF

Saturation voltages

–IC = 20 mA; –IB = 2 mA

–VCEsat

max. 0.5

0.5 V

–IC = 20 mA; –IB = 2 mA

–VBEsat

max. 0.9

0.9 V

D.C. current gain

–IC = 1 mA; –VCE = 10 V

hFE

min.

–IC = 10 mA; –VCE = 10 V

hFE

min.

–IC = 30 mA; –VCE = 10 V

hFE

min.

CMBTA92

CMBTA93

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