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CSC3039 Datasheet(PDF) 2 Page - Continental Device India Limited |
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CSC3039 Datasheet(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page ![]() Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to TC = 25°C Ptot max. 50 W Total power dissipation up to TA = 25°C Ptot max. 1.75 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 400V ICBO max. 10 µA Emitter cut-off current IC = 0; VEB = 5V IEBO max. 10 µA Breakdown voltages IC = 5 mA; IB = 0 VCEO(sus)* min. 400 V IC = 1 mA; IE = 0 VCBO min. 500 V IE = 1 mA; IC = 0 VEBO min. 7.0 V Saturation voltages IC = 4 A; IB = 0.8 A VCEsat* max. 1.0 V VBEsat* max. 1.5 V D.C. current gain IC = 0.8A; VCE = 5V hFE* min. 15 IC = 4A; VCE = 5V hFE* min. 8 Transition frequency IC = 0.8A; VCE = 10V fT typ. 20 MHz Output capacitance f = 1 MHz IE = 0; VCB = 10V Co typ. 80 pF Switching time IC = 5A; IB1 = IB2 = –1A RL = 40Ω; VCC = 200V Turn on time ton max. 1.0 µs Storage time tstg max. 2.5 µs Fall time tf max 1.0 µs * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) PW ≤ 300 µs; duty cycle ≤ 10%. CSC3039 |
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