2N5064 datasheet(2/4 Pages) PHILIPS

2 / 4 page

Philips Semiconductors

Product specification

Thyristor

2N5064

sensitive gate

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-c

Thermal resistance

see note:

K/W

junction to case

th j-a

Thermal resistance

200

K/W

junction to ambient

STATIC CHARACTERISTICS

c = 25 ˚C, RGK = 1 kΩ unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Gate trigger current

c = 25 ˚C

200

µA

c = -65 ˚C

350

µA

D = VDRM(max); RL = 100 Ω; gate open

circuit

Latching current

D = 12 V; RGK = 1 kΩ

Holding current

D = 12 V; RGK = 1 kΩ

On-state voltage

T = 1.2 A peak; tp = 300 µs; δ ≤ 0.01

1.7

Gate trigger voltage

j = 25 ˚C

0.8

j = -65 ˚C

1.2

j = 125 ˚C

0.1

D = VDRM(max); RL = 100 Ω; gate open

circuit

D, IR

Off-state leakage current

D = VDRM(max); VR = VRRM(max)

j = 25 ˚C

µA

j = 125 ˚C

µA

DYNAMIC CHARACTERISTICS

c = 25 ˚C, RGK = 1 kΩ unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Critical rate of rise of

DM = 67% VDRM(max); Tj = 125 ˚C;

µs

off-state voltage

exponential waveform; R

GK = 1 kΩ

Gate controlled turn-on

TM = 2 A; VD = VDRM(max); IG = 10 mA;

µs

time

G/dt = 0.1 A/µs

Circuit commutated

DM = 67% VDRM(max); Tj = 125 ˚C;

100

µs

turn-off time

TM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;

D/dt = 2 V/µs; RGK = 1 kΩ

1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of

a metal clamp over the curved surface.

October 1997

Rev 1.200

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