PNP SILICON PLANAR EPITAXIAL TRANSISTORS

P2N2907

P2N2907A

TO-92

Plastic Package

Designed for switching and linear applications, DC amplifier and driver for industrial applications

DESCRIPTION

SYMBOL

P2N2907

UNIT

Collector Emitter Voltage

40

V

Collector Base Voltage

60

V

Emitter Base Voltage

V

Collector Current

mA

mW

Derate above 25ºC

mW/ºC

W

Derate above 25ºC

mW/ºC

Operating and Storage Junction

Temperature Range

ºC

THERMAL RESISTANCE

Junction to Case

ºC/W

Junction to Ambient

ºC/W

DESCRIPTION

SYMBOL

TEST CONDITION

P2N2907

P2N2907A

UNIT

Collector Emitter Voltage

>40

>60

V

Collector Base Voltage

>60

>60

V

Emitter Base Voltage

>5

>5

V

<20

<10

nA

<20

<10

µA

<50

<50

nA

<10

<10

nA

Emitter Cut off Current

<10

<10

nA

Base Cut off Current

<50

<50

nA

Collector Emitter Saturation Voltage

<0.4

<0.4

<1.6

<1.6

Base Emitter Saturation Voltage

<1.3

<1.3

<2.6

<2.6

P2N2907_A Rev_1151204D

5

600

5

625

1.5

12

P2N2907A

60

60

- 55 to +150

83.3

200

Collector Cut off Current

V

V

C B

E

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company