April 1995

3

Philips Semiconductors

Product specification

N-channel vertical D-MOS transistor

2N7002

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Notes

1. Mounted on a ceramic substrate measuring 10

× 8 × 0.7 mm.

2. Mounted on a printed circuit board.

THERMAL RESISTANCE

Notes

1. Mounted on a ceramic substrate measuring 10

× 8 × 0.7 mm.

2. Mounted on a printed circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

60

V

gate-source voltage

open drain

−

40

V

drain current

DC value

−

180

mA

drain current

peak value

−

800

mA

total power dissipation

(note 1)

(note 2)

−

−

300

250

mW

mW

storage temperature range

−65

150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

from junction to ambient

note 1

note 2

430

500

K/W

K/W