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1SS166 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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1SS166 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() 1SS166 SCHOTTKY BARRIER DIODES FEATURES : • Low forward voltage • High breakdown voltage • Low diode capacitance. • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit Reverse Voltage VR 10 V Average Rectified Current Io 15 mA Power Dissipation PD 150 mW Junction Temperature TJ 100 °C Storage temperature range Tstg -55 to + 100 °C Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Electrical Characteristics (T J = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit VR = 10 V - - 10 µA VR = 2 V - - 0.2 µA IF = 1 mA 365 - 430 mV IF = 10 mA 520 - 600 mV Diode Capacitance Cd VR = 0V, f = 1MHz - - 1.2 pF ∆V F IF = 10 mA - - ±5 mV Page 1 of 2 Rev. 02 : March 24, 2005 Forward Voltage Deviation Test Condition Parameter Reverse Current IR Forward Voltage VF DO - 34 Glass 0.063 (1.6 )max. 0.119 (3.04) max. 0.022 (0.55)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark |
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