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1SS178 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # 1SS178
Description  HIGH SPEED SWITCHING DIODE
PDF  1 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

1SS178 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

  1SS178 Datasheet HTML 1Page - EIC discrete Semiconductors  
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1SS178
HIGH SPEED SWITCHING DIODE
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 80 V
• Repetitive peak reverse voltage:max. 90 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.093g
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol
Value
Unit
VRRM
90
V
VRM
80
V
Maximum Average Forward Current
IF
100
mA
Maximum Peak Forward Current
IFM
300
mA
Maximum Power Dissipation
PD
300
mW
Maximum Non-repetitive Peak Forward Current
IFSM
1.0
A
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Current
IR
VR = 80 V
-
-
0.5
μA
Forward Voltage
VF
IF = 100 mA
-
-
1.2
V
Capacitance between terminals
CT
-
-
3.0
pF
IF = 10 mA , VR = 6 V
RL = 50 Ω
Page 1 of 1
Rev. 01 : August 17, 2005
f = 1MHz ; VR = 0.5 V
Reverse Recovery Time
ns
4.0
-
-
Trr
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Test Condition
DO - 34 Glass
Dimensions in inches and ( millimeters )
0.078 (2.0 )max.
0.118 (3.0)
max.
0.019 (0.50)max.
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark


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