2PA733 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 28

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

2PA733

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless other speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −60 V

−−−100 nA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−100 nA

hFE

DC current gain

IC = −1 mA; VCE = −6V

2PA733P

200

−

400

VCEsat

collector-emitter saturation voltage IC = −100 mA; IB = −10 mA

−−−300 mV

VBE

base-emitter voltage

IC = −1 mA; VCE = −6V

−600 −−700 mV

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −6 V; f = 100 MHz 100

180

−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 100 Hz

−−

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