HSS100 datasheet(1/2 Pages) EIC

Part #	HSS100

Description	SCHOTTKY BARRIER DIODE

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Manufacturer	EIC [EIC discrete Semiconductors]

Direct Link	http://www.eicsemi.com

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HSS100

SCHOTTKY BARRIER DIODE

FEATURES :

• Very Low IR

• Low VF and high efficiency.

• Pb / RoHS Free

MECHANICAL DATA :

Case: DO-34 Glass Case

Weight: approx. 0.11g

Maximum Ratings and Thermal Characteristics (Rating at 25

°C ambient temperature unless otherwise specified.)

Symbol

Value

Unit

Reverse Voltage

VR

60

V

Average Rectified Current

Io

35

mA

Power Dissipation

PD

150

mW

Junction Temperature

TJ

125

°C

Storage temperature range

Tstg

-65 to + 125

°C

Electrical Characteristics (Ta = 25

°C unless otherwise noted)

Parameter

Symbol

Min

Typ

Max

Unit

Reverse Current

IR

VR = 50 V

-

100

nA

Reverse Voltage

VR

IR = 10 µA

60

-

V

IF = 10 mA

-

0.42

V

IF = 20 mA

-

0.90

V

Diode Capacitance

Cd

VR = 0V, f = 1MHz

-

2.2

pF

Diode Capacitance Deviation

∆Cd

VR = 0V, f = 1MHz

-

0.2

pF

∆V

F

IF = 20 mA

-

10

mV

Page 1 of 2

Rev. 02 : March 24, 2005

Test Condition

Parameter

Forward Voltage Deviation

Forward Voltage

VF

DO - 34 Glass

0.063 (1.6 )max.

0.119 (3.04)

max.

0.022 (0.55)max.

Dimensions in inches and ( millimeters )

1.00 (25.4)

min.

1.00 (25.4)

min.

Cathode

Mark

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